| 摘要 |
PURPOSE: An oxide semiconductor, a thin film transistor and, a display device are that the channel forming region is formed in the oxide semiconductor layer. The off current of the thin film transistor is reduced. CONSTITUTION: A gate electrode(102) and a gate isolation layer(103) are formed on a substrate. The oxide semiconductor layer(106) is formed on the gate isolation layer. A source electrode and drain electrode locate between the gate isolation layer and oxide semiconductor layer. The gate electrode is formed into the high fusion point metal such as Ti, Mo, Cr, Ta, W etc. |
