NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME

摘要

PURPOSE: A non-volatile memory device and a driving method thereof are provided to reduce the malfunction of an adjacent non-selected nonvolatile memory transistor by asymmetrically positioning a single selection transistor between different nonvolatile memory transistors sharing a common source. CONSTITUTION: A memory cell array comprises a memory unit cell(M) which is arranged to the matrix type. The memory unit cells respectively include a first, a second nonvolatile memory transistor(TA,TB) and a selection transistor(TS), respectively. A first word line is combined in control gates of first nonvolatile memory transistors. A second word line is combined in control gates of second nonvolatile memory transistors. A selection line is combined in the gates of selecting transistors. At least one bit line is connected to drains of the first and the second nonvolatile memory transistors.