发明名称 Thin film transistor, fabrication method thereof, liquid crystal display panel device having the same, and fabrication method thereof
摘要 A TFT that provides an efficient layout, a fabrication method thereof, an LCD device having the TFT, and a fabrication method thereof are provided. The TFT has a gate electrode and source/drain electrodes with an active layer interposed. The source electrodes and the drain electrodes are alternated in a vertical direction and a horizontal direction. Thus, the same source electrodes and the same drain electrodes are arranged in a diagonal direction. Source lines are connected with the source electrodes arranged in a diagonal direction and drain lines are connected with the drain electrodes arranged in a diagonal direction. Since a channel width is formed between the source electrode and adjacent drain electrodes, the channel width can be maximized within a limited area. Also, the source lines and the drain lines are arranged in a diagonal direction, so that an area use rate is maximized.
申请公布号 US7710525(B2) 申请公布日期 2010.05.04
申请号 US20050259029 申请日期 2005.10.27
申请人 LG DISPLAY CO., LTD. 发明人 SOHN CHOONG YONG
分类号 G02F1/1343;H01L21/00;H01L33/00 主分类号 G02F1/1343
代理机构 代理人
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