| 摘要 |
A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.
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