METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of the semiconductor device uses the exposure mask having domain of a plurality of thicknesses formed with the gray-scale mask. The ream of the exposure mask can be reduced. CONSTITUTION: A gate electrode layer(401) is formed on the substrate having insulating surface. The gate isolation layer(402), and oxide semiconductor films(431, 432) and conductive film(433) are laminated on the gate electrode layer. The first mask layer is formed on the gate isolation layer, and the oxide semiconductor film and conductive film.