III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A third group nitride semiconductor light emitting device is provided to improve the optical extraction efficiency of the light emitting device by deforming a substrate with a laser in order to form a variety of the scattering angles of a scattering region. CONSTITUTION: A scattering region(90) is formed in a substrate(10). An n-type third group-nitride semiconductor layer(30) with a first conductivity is formed on the substrate. A p-type third group-nitride semiconductor layer(50) with a second conductivity is formed on the n-type third group-nitride semiconductor layer. An active layer(40) is arranged between the n-type third group-nitride semiconductor layer and the p-type third group-nitride semiconductor layer.