发明名称 Semiconductor memory device having data holding mode using ECC function
摘要 When memory cells enter an operation mode which performs only data holding, a control circuit controls the memory cells and an ECC circuit as follows. A plurality of data are read out to generate and store a check bit for error detection and correction. Refreshing is performed in a period within the error occurrence allowable range of an error correcting operation performed by the ECC circuit by using the check bit. Before a normal operation mode is restored from the operation mode which performs only data holding, an error bit of the data is corrected by using the check bit. In an entry/exit period, read/write and an ECC operation are sequentially performed for all the memory cells by a page mode operation. Memory cells connected to a word line which is not accessed by the page mode operation are sequentially activated and refreshed.
申请公布号 US7712007(B2) 申请公布日期 2010.05.04
申请号 US20060531895 申请日期 2006.09.14
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 NAGAI TAKESHI;MIYANO SHINJI
分类号 H03M13/00 主分类号 H03M13/00
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