发明名称 Polymer memory with adhesion layer containing an immobilized metal
摘要 An embodiment mitigates one or more of the limiting factors of fabricating polymer ferroelectric memory devices. For example, an embodiment reduces the degradation of the ferroelectric polymer due to the polymer's reaction with, and migration or diffusion of, adjacent metal electrode material. Further, the ferroelectric polymer is exposed to fewer potentially high temperature or high energy processes that may damage the polymer. An embodiment further incorporates an immobilized catalyst to improve the adhesion between adjacent layers, and particularly between the electrolessly plated electrodes and the ferroelectric polymer.
申请公布号 US7709873(B2) 申请公布日期 2010.05.04
申请号 US20050096389 申请日期 2005.03.31
申请人 INTEL CORPORATION 发明人 DUBIN VALERY M.;ANDIDEH EBRAHIM
分类号 H01L29/76;H01L29/74;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L29/76
代理机构 代理人
主权项
地址