发明名称 SEMICONDUCTOR DEVICE HAVING PROJECTING ELECTRODE FORMED BY ELECTROLYTIC PLATING, AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate. The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pat portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.
申请公布号 KR100956229(B1) 申请公布日期 2010.05.04
申请号 KR20070113162 申请日期 2007.11.07
申请人 发明人
分类号 H01L21/60;H01L23/12;H01L23/48;H01L23/52 主分类号 H01L21/60
代理机构 代理人
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