| 摘要 |
There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).
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