PURPOSE: A resistor-capacitor structure for a semiconductor sensor is provided to smoothly process the signal of the semiconductor sensor by forming a chip structure in order to apply the driving voltage of the semiconductor sensor. CONSTITUTION: An oxide layer(120) is formed on the upper side of a semiconductor substrate(110). An electrode layer(130) is formed on the upper side of the oxide layer. A resistant layer(132) is formed on the other upper side of the oxide layer. A dielectric layer(140) is formed on the upper side of the electrode layer and the resistant layer. A metal layer(150) is formed on the dielectric layer which corresponds to the electrode layer. A protective layer is formed on the dielectric layer and the metal layer.
申请公布号
KR20100045606(A)
申请公布日期
2010.05.04
申请号
KR20080104603
申请日期
2008.10.24
申请人
KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
发明人
PARK, HWAN BAE;KAH, DONG HA;KANG, HEE DONG;KIM, HONG JU;BAE, JAE BEOM;HYUN, HYO JUNG;SON, DO HEE;KIM, YOUNG IM;KIM, HYUN OK