发明名称 DLL circuit, semiconductor memory device using the same, and data processing system
摘要 A DLL circuit includes a delay line (CDL) (10) that delays a clock signal at a relatively coarse adjustment pitch, a delay line (FDL) (20) that delays the clock signal at a relatively fine adjustment pitch, and phase detecting circuits and counter control circuits that control delay amounts of the delay lines (10, 20). The counter control circuits control the delay line (10) by a linear search method, and control the delay line (20) by a binary search method. As a result, even when the number of bits of the count signal for adjusting the delay line (20) is increased, a delay amount can be determined at a high speed.
申请公布号 US7710172(B2) 申请公布日期 2010.05.04
申请号 US20080169972 申请日期 2008.07.09
申请人 ELPIDA MEMORY, INC. 发明人 KUROKI KOJI;TAKAI YASUHIRO;FUJISAWA HIROKI
分类号 H03L7/06 主分类号 H03L7/06
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