| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to separate the gap between photoelectric conversion elements without forming a STI(Shallow Trench Isolation) by executing a deep implant process between photoelectric conversion elements. CONSTITUTION: A photoelectric conversion element(PD1A~PD2D) is formed in the partial regions on a semiconductor substrate. A photoresist pattern covering the photoelectric conversion elements is formed on the semiconductor substrate. A deep implant process is executed in the partial region on the semiconductor substrate in which the photoresist pattern is not formed. The photoresist pattern is removed. The photoelectric conversion elements are formed through a connection active by being sequentially paired every two.
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