| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to improve the property of a semiconductor device by establishing an optimized process without a wiring attack and polymer residue. CONSTITUTION: A photoresist pattern is formed on a semiconductor substrate. The semiconductor substrate is etched through a RIE(Reactive Ion Etching) process using the photoresist pattern. A cleaning process is executed by using a liquid inorganic compound on the semiconductor substrate. The liquid inorganic compound is a LIC-3(Low temperature Inorganic Chemical). The LIC-3 is the compound mixing the HF, the H2SO4, and the H2O2.</p> |
