| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce the leakage in a blue photodiode region by forming an oxide film on a semiconductor substrate in the upper side of the blue photodiode. CONSTITUTION: A first impurity region is formed within a semiconductor substrate(10). A red photo diode(30) is formed within the first impurity region. A first silicon epitaxial layer(40) is formed on the semiconductor substrate with the epitaxial growth method. A first plug(50) connected to the red photo diode is formed within the first silicon epitaxial layer. A second impurity region is formed within the first silicon epitaxial layer. A green photo diode(70) is formed within the second impurity region. A second silicon epitaxial layer(80) is formed on the first silicon epitaxial layer with the epitaxial growth.
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