| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to reduce the contact resistance with a wiring by selectively forming a silicide pattern in a side wall of a photodiode. CONSTITUTION: A wiring and an interlayer dielectric layer(160) are formed on a semiconductor substrate. An image sensing part(200) is formed on the interlayer dielectric layer. An image sensing part comprises a first doped layer(210) and a second doped layer(220). A via hole exposes the wiring by passing through the image sensing part and the interlayer dielectric layer. A metal pattern is formed in the sidewall and the floor side of the via hole. A silicide pattern(250) is formed in the sidewall of the via hole in order to be connected to the metal pattern. A barrier pattern(265) is formed along the surface of the silicide pattern and the metal pattern.
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