FUSE IN THE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A fuse in a semiconductor device and a method for manufacturing the same are provided to protect a barrier metal layer from exposing by forming an oxide layer on the sidewall of the barrier metal layer which is located on the lower side of a fuse pattern. CONSTITUTION: A barrier metal layer and a metal layer(215) are formed on the upper side of a first insulation layer(205). The metal layer and the barrier metal layer are patterned in order to form a fuse pattern(225). The sidewall of the patterned barrier metal layer is etched to form an under-cut. A protective layer fills the under-cut. A second insulation layer(235) is formed on the upper side of the protective layer. The first and the second insulation layers are selectively etched to form a fuse open region(250).