| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a further improved semiconductor device using a bulk silicon wafer without using an expensive SOI wafer. SOLUTION: The method of manufacturing the semiconductor device comprises: forming buffer layers 12, 14 on a semiconductor substrate 10; patterning the buffer layer in a first direction to form buffer layer patterns being spaced from each other at predetermined intervals; forming a semiconductor epitaxial layer 18 on and between the buffer layer patterns; forming a first trench 300 in a second direction perpendicular to the first direction to expose lateral surfaces of the buffer layer patterns; selectively removing the buffer layer patterns exposed by the first trench; forming buried insulating films 22 in the spaces formed by removal of the buffer layer patterns; removing a portion of the semiconductor epitaxial layer disposed between the buried insulating films to form a second trench 400 in the first direction; and forming device isolation films 300a, 400a in the first and second trenches. COPYRIGHT: (C)2010,JPO&INPIT |
