TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING TUNNEL BARRIER LAYER

摘要

<P>PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive effect element which can provide a required MR (magnetoresistance) ratio while reducing the resistance without reducing the film thickness of a tunnel barrier layer. Ž<P>SOLUTION: The element includes a tunnel barrier layer 27, a magnetization fixed layer 26 and a magnetization free layer 28 provided to sandwich the tunnel barrier layer 27. The tunnel barrier layer 27 has a three-layer structure of MgO/Mg/MgZnO. The thickness of the Mg layer in the tunnel barrier layer 27 is 0.5-2.0 Å. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž