| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which simply forms the device patterns of desired size through etching in a rough part and a dense part respectively. Ž<P>SOLUTION: The method of manufacturing a semiconductor device includes: a step of forming two layers of mask layers 13, 14 on a metallic layer 12; and a step of forming mask patterns 13-1 to 13-4, 14-1 to 14-4 through etching to the two layers of mask layers 13, 14 by changing one etching parameter for regulating the amount of CD shift in the rough part which roughly forms the device pattern and a dense part which densely forms the device pattern to form the mask patterns 13-1 to 13-4, 14-1 to 14-4. Gate electrodes 12-1 to 12-4 are formed through etching of the metallic layer 12 employing the mask patterns 13-1 to 13-4. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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