| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device with a vertical gate is provided to optimize the thickness of a protective film by suppressing the loss of a protective film until a gate insulating layer is formed. CONSTITUTION: A protective film(22A) and a sacrificial protective layer(23A) are deposited on a substrate. A reserved region for active pillar is formed by etching the sacrificial protective layer, the protective film, and the substrate. The sacrificial protective layer and the protective film use a vertical gate mask as an etching barrier wall. The plural active pillar(28A) is formed by etching the reserved active pillar. The sacrificial protective layer is removed. The vertical gate surrounds the side wall of the active pillar.</p> |
