| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an information memory element, consisting of a magnetic memory of a magnetic domain wall displacement-type which can move a stable magnetic domain wall and can write, maintain and read information, without fail. <P>SOLUTION: An information memory element 100 is provided with a long and narrow ferromagnetic material layer 111; and there are provided a first electrode 121 and a second electrode 122 at one end and the other end of the ferromagnetic material layer, respectively; and a current-inducing magnetic domain wall displacement is generated by passing a current between the first electrode 121 and the second electrode 122. In the ferromagnetic material layer 111, a magnetization state is written into a magnetization region as information. Alternatively, the magnetization state is read into the magnetization region as information. A magnetized direction in each magnetization region is parallel to the thickness direction of the ferromagnetic material layer 111; and when the information is written or read on the ferromagnetic material layer 111 there is produced a temperature distribution which monotonically decreases from the other end to the one end of the ferromagnetic material layer 111. <P>COPYRIGHT: (C)2010,JPO&INPIT |
