发明名称 PRODUCTION METHOD FOR SEMICONDUCTOR JUNCTION WAFER
摘要 PROBLEM TO BE SOLVED: To separate an active layer from a mismatch failure of a bonded interface. SOLUTION: A layer 1 with high-concentration impurities and a layer 2 with low-concentration of impurities are bonded, and by subjecting it to fixing and heat treatment, the layer 1 is diffused to the layer 2, with low impurities concentration, thus forming a diffusion layer 3 with high-concentration impurities; the impurities form a trench 11, ranging from the lightly-doped layer 2 to the heavily-doped diffusion layer 3; and the impurities form a layer 12 along the trench 11 that communicates with the lightly-doped layer 2 and the heavily-doped diffusion layer 3, and thereby the trench 11 and the layer 12 alongside it are arranged, separated away from the bonded interface A1 of the layer 1 and the layer 2. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010098043(A) 申请公布日期 2010.04.30
申请号 JP20080266260 申请日期 2008.10.15
申请人 NAOETSU ELECTRONICS CO LTD 发明人 TAKEDA KEIICHI
分类号 H01L21/02;H01L21/322;H01L21/336;H01L29/78 主分类号 H01L21/02
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