METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent loading effect by stably removing a remaining TiN film. CONSTITUTION: In a method of manufacturing a semiconductor device, a pillar type active(100a) is formed on the top of a semiconductor substrate(100). A pillar type active has a hard mask(105). The gate metal film protects the sidewall of the pillar type active. A sacrificing layer fills in the pillar type active. The sacrificing layer and the gate metal film are partly etched. The remaining sacrificing layer is removed.