| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which defects in characteristics due to electrostatic discharge is reduced and to provide a method for manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device has at least one of these structures: (1) a structure in which a first and second insulating films are in direct contact with each other in a peripheral region of a circuit portion, (2) a structure in which a first and second insulators are closely attached to each other, and (3) a structure in which a first conductive layer and a second conductive layer are provided on outer surfaces of the first insulator and the second insulator, respectively, and electrical conduction between the first and second conductive layers is achieved at a side surface of the outer side of the peripheral region. Note that the conduction at the side surface can be achieved by cutting semiconductor devices into separate semiconductor devices. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
