| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which satisfies both high integration degree and improvement of yield while securing a lithographic margin in consideration of ground level difference and a manufacturing method thereof. <P>SOLUTION: An interlayer insulating film ID11 after CMP has a first surface SF11 and a second surface SF12 located nearer the substrate side than the first surface SF11, and a diameter (D11d) of the uppermost part of a first hole CH11 to be formed on the first surface SF11 is provided so as to be larger than a diameter (D12d) of the uppermost part of a second hole CH12 to be formed on the second surface SF12. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
