| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline silicon capable of improving the generation efficiency of a photovoltaic power generator. <P>SOLUTION: Argon gas and hydrogen gas are introduced into a chamber 10 from a gas inlet 10a and a gas inlet 10b, respectively to grow a polycrystalline silicon ingot 33 in this condition. Thereby, since hydrogen is directly introduced into a silicon melt 32, a large amount of hydrogen is taken into the silicon melt 32. For this reason, a larger amount of hydrogen than before is contained in the polycrystalline silicon wafer to be finally obtained, and the concentration distribution of hydrogen is almost constant in the in-plane direction and in the thickness direction. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
