| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the deterioration of electrical characteristics such as an increase of wiring resistance caused by the relative displacement of a mask and the lowering of wiring reliability without using a mask having a mask pattern one end of which is broadened, in connecting exposure. Ž<P>SOLUTION: This semiconductor device includes a first wiring pattern 101 formed by using a first exposure mask in a first exposure region out of the first exposure region and a second exposure region adjacent to each other on a semiconductor substrate, a second wiring pattern 102 formed as a wiring pattern connected to the first wiring pattern 101 in the same layer as that for the first wiring pattern 101 by using the second exposure mask in the second exposure region, vias 103, 104 formed in the connected portion of the first wiring pattern 101 and the second wiring pattern 102, and a connecting pattern 105 formed between the vias 103, 104. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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