| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent an abnormal oxidation phenomenon generated in the side of a metal based conductive layer in a thermal process by forming a metal carbide layer for the anti-oxidation. CONSTITUTION: A gate insulating layer(122), a first conductive layer(124), a metal based second conductive layer(126), and a hard mask layer(128) are successively formed on a semiconductor substrate(110). A gate(120) with re-deposited polymer layer(140) is formed by etching the hard mask layer, the metal based second conductive layer, the first conductive layer, and the gate insulating layer. A metal carbide layer(150) is formed on the side of the metal based second conductive layer with plasma. The polymer layer is removed.
|
