LASER CRYSTALLIZATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a laser crystallization method capable of crystallizing an amorphous silicon thin film only on an area on which a thin film transistor is formed. SOLUTION: A crystallization method of irradiating an amorphous silicon thin film 2 formed on a substrate 1 with a laser beam to carry out crystallization, includes: an absorbent printing step of printing an absorbent layer 3 on a desired local area of the amorphous silicon thin film 2; and a laser annealing step of crystallizing the local area of the amorphous silicon thin film 2 by irradiating the amorphous silicon thin film 4 including the local area with a semiconductor laser beam L having a wavelength absorbable by the absorbent layer 3 and unabsorbable by the amorphous silicon thin film 2 for heating the absorbent layer 3. COPYRIGHT: (C)2010,JPO&INPIT