| 摘要 |
PROBLEM TO BE SOLVED: To provide etching equipment capable of performing processing without any cracks of substrates during etching, and to provide an etching method for the etching equipment. SOLUTION: The etching equipment includes: a clamping ring 33 for fixing the substrate S; and a ring member 34 provided between the clamp ring and the periphery of the substrate. A substrate tray includes a two-stage front recess between first and second surface recesses 32a, 32c, a rear recess 32d, and a peripheral contact surface section 32e that surrounds the rear recess and abuts on a substrate electrode 31, a cooling gas channel 32f is formed, and the ring member is composed of a material having a heat conductivity of not more than 1.5 W/mK. By the etching equipment, the substrate tray on which the substrate is placed is attached onto the substrate electrode, the periphery of the substrate is pressed and fixed by the clamp ring via the ring member, and the substrate is etched under a high-density plasma atmosphere while the cooling gas flows. COPYRIGHT: (C)2010,JPO&INPIT |
