发明名称 SUSCEPTOR FOR PLASMA CVD DEVICE AND METHOD OF MANUFACTURING THE SAME, PLASMA CVD DEVICE AND MAINTENANCE METHOD FOR THE PLASMA CVD DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a susceptor for a plasma CVD device, which reduces frequencies of maintenance and enables stable film deposition for a long period of time. SOLUTION: The susceptor 100 for the plasma CVD device has: a susceptor substrate 110 containing aluminum or aluminum alloy; an alumite layer 120 formed so as to have a crack 122 on the susceptor substrate 110; and a coating layer 130 formed inside the crack 122. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010098158(A) 申请公布日期 2010.04.30
申请号 JP20080268371 申请日期 2008.10.17
申请人 SEIKO EPSON CORP 发明人 GOTO OSAMU;SATO KIMITAKE
分类号 H01L21/683;C23C16/458;H01L21/205;H01L21/31 主分类号 H01L21/683
代理机构 代理人
主权项
地址