发明名称 |
SUSCEPTOR FOR PLASMA CVD DEVICE AND METHOD OF MANUFACTURING THE SAME, PLASMA CVD DEVICE AND MAINTENANCE METHOD FOR THE PLASMA CVD DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a susceptor for a plasma CVD device, which reduces frequencies of maintenance and enables stable film deposition for a long period of time. SOLUTION: The susceptor 100 for the plasma CVD device has: a susceptor substrate 110 containing aluminum or aluminum alloy; an alumite layer 120 formed so as to have a crack 122 on the susceptor substrate 110; and a coating layer 130 formed inside the crack 122. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010098158(A) |
申请公布日期 |
2010.04.30 |
申请号 |
JP20080268371 |
申请日期 |
2008.10.17 |
申请人 |
SEIKO EPSON CORP |
发明人 |
GOTO OSAMU;SATO KIMITAKE |
分类号 |
H01L21/683;C23C16/458;H01L21/205;H01L21/31 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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