| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a sputtering method and the like which can efficiently deposit a sputtering film having a desired composition by the sputtering method using elements in group-IB, group-IIIB, and group-VIB of the periodic table. <P>SOLUTION: In the sputtering method, composite targets 21, 22, and 23 which are respectively placed on target electrodes 21a, 22a, and 23a connected to a high-frequency power source II and comprise a plurality of elements selected from elements in group-IB, group-IIIB, and group-VIB of the periodic table, and a substrate 11 as a film deposition body are disposed in opposition to each other in the atmosphere of inert gas Ar, and a high voltage is applied to target electrodes 21a, 22a, and 23a to sputter surfaces of composite targets 21, 22, and 23, whereby a thin film is deposited on the substrate 11. The substrate 11 is moved in front of the plurality of composite targets 21, 22, and 23 to deposit the laminate of thin films on the substrate 11. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
