| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an information memory element consisting of a magnetic memory of a magnetic domain wall displacement-type which can move a stable magnetic domain wall and can write, maintain and read information without fail. <P>SOLUTION: An information memory element is provided with a long and narrow ferromagnetic material layer 111. There are provided a first electrode 121 at one end of the ferromagnetic material layer 111 and a second electrode 122 at the other end thereof. A current inducing magnetic domain wall displacement is generated by passing a current between the first electrode 121 and the second electrode 122. In the ferromagnetic material layer 111, a magnetization state is written in a magnetization region as the information. Or, the magnetization state is read as the information. There is provided an antiferromagnetic region 130 consisting of an antiferromagnetic material, linking up at least a part of the ferromagnetic material layer 111. <P>COPYRIGHT: (C)2010,JPO&INPIT |
