| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulated gate transistor chip which prevents with a simple composition the gate oscillation caused by a feedback circuit formed for a reason in the insulated gate bipolar transistor chip. SOLUTION: The insulated gate bipolar transistor chip includes: a semiconductor substrate; an emitter electrode formed on the front surface of the semiconductor substrate; a collector electrode formed on the back surface of the semiconductor substrate; and a gate pad formed on the front surface of the semiconductor substrate. Furthermore, the insulated gate bipolar transistor chip includes: a first gate wiring which is formed on the front surface of the semiconductor substrate and one end of which is connected to the gate pad; a first built-in resistor which is formed on the front surface of the semiconductor substrate and to which the other end of the first gate wiring is connected; and a second gate wiring which is formed on the front surface of the semiconductor substrate and one end of which is connected via the first built-in resistor to the other end of the first gate wiring. COPYRIGHT: (C)2010,JPO&INPIT |
