| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor which copes with a requirement for miniaturization of a pixel pitch of a liquid crystal device, and which satisfactorily receives the full benefit of an improvement of a display performance to be obtained by the miniaturization. Ž<P>SOLUTION: The respective widths (W1) of drain regions (1d) are thinner than the width (W3) of a channel region (1c) along the width direction. In addition, the respective thicknesses (T1) of the drain regions (1d) are thinner than the thickness (T3) of the channel region (1c). Therefore, the area of the surface comprising the side surface and the upper surface of the drain regions (1d) of the TFT (thin-film transistor) (30) is smaller than the area of the surface of the drain region of the TFT related to the comparison example. Therefore, the respective surface areas of each of the drain regions (1d) of the TFT (30) without shielded by a gate electrode (3a2) can be reduced to decrease an amount of light received by the drain regions (1d) out of the light three dimensionally irradiated from the above side of the TFT (30), thereby decreasing the light leak current. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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