| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting device which provides a light emission spectrum with two peaks having stable light emission peak intensity ratio. <P>SOLUTION: The nitride semiconductor light emitting device 1 includes an active layer 12 between an n-type nitride semiconductor layer 11 and a p-type nitride semiconductor layer 13. The active layer 12 has: a first well layer 14; second well layers 15 which are formed at the outermost side among well layers and sandwich the first well layer 14; and barrier layers 16, 17 formed between the respective cell layers wherein each of the second well layers 15 comprises a nitride semiconductor with band gap energy larger than that of a nitride semiconductor constituting the first well layer 14, and has the peaks of the light emission spectrums corresponding to each of the first well layer 14 and the second well layers 15. <P>COPYRIGHT: (C)2010,JPO&INPIT |
