| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a tunnel magnetoresistive effect element which can provide a required MR (magnetoresistance) ratio while reducing the resistance without reducing the film thickness of a tunnel barrier layer, and to provide a magnetoresistive device using the same. Ž<P>SOLUTION: The tunnel magnetoresistive effect element includes a tunnel barrier layer 27, and a magnetization fixed layer 26 and a magnetization free layer 28 provided so as to sandwich the tunnel barrier layer 27. The tunnel barrier layer 27 is formed by an insulating layer consisting of a binary rock salt type oxide, and the oxygen concentration of the insulating layer is set lower than the stoichiometric composition of the binary rock salt type oxide. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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