METHOD FOR FORMING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a semiconductor device is provided to improve the uniformity of line widths by forming fine patterns without a deposition process. CONSTITUTION: A sacrificial layer is formed on a semiconductor substrate. A photo-resist pattern(120) is formed on the upper side of the sacrificial layer. A pre-set depth of the sacrificial layer is etched using the photo-resist pattern as an etching mask. A resist enhancement lithography assisted by chemical shrink(RELACS) patterns(122) are formed on the surface of the photo-resist layer. A gap fill material(124) is formed to fill the space between the RELACS patterns. The RELACS patterns are removed.