发明名称 PHOTODIODE ARRAY, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a photodiode array and a radiation detector improving aperture ratio and detection sensitivity while maintaining mechanical strength. <P>SOLUTION: A plurality of pn junction photodiodes are arrayed on a semiconductor substrate on the opposite side of an incident surface where detected light enters. The semiconductor substrate is thinned in the area where the plurality of photodiodes are arrayed from the incident surface side to form a projected section 9 between the areas where the plurality of photodiodes are arrayed in such a way that its cross section outlines a projected figure toward the incident surface. A high impurity concentration region 5b having the same conductivity as the incident surface side where the light detected by the photodiode enters is formed in the projected section 9. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010098329(A) 申请公布日期 2010.04.30
申请号 JP20100000199 申请日期 2010.01.04
申请人 HAMAMATSU PHOTONICS KK 发明人 SHIBAYAMA KATSUMI
分类号 H01L31/10;G01T1/20;G01T1/24;H01L27/14;H01L27/144;H01L27/146;H01L31/0236;H01L31/103;H04N5/32;H04N5/335;H04N5/369 主分类号 H01L31/10
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