发明名称 |
PHOTODIODE ARRAY, METHOD OF MANUFACTURING THE SAME, AND RADIATION DETECTOR |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photodiode array and a radiation detector improving aperture ratio and detection sensitivity while maintaining mechanical strength. <P>SOLUTION: A plurality of pn junction photodiodes are arrayed on a semiconductor substrate on the opposite side of an incident surface where detected light enters. The semiconductor substrate is thinned in the area where the plurality of photodiodes are arrayed from the incident surface side to form a projected section 9 between the areas where the plurality of photodiodes are arrayed in such a way that its cross section outlines a projected figure toward the incident surface. A high impurity concentration region 5b having the same conductivity as the incident surface side where the light detected by the photodiode enters is formed in the projected section 9. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010098329(A) |
申请公布日期 |
2010.04.30 |
申请号 |
JP20100000199 |
申请日期 |
2010.01.04 |
申请人 |
HAMAMATSU PHOTONICS KK |
发明人 |
SHIBAYAMA KATSUMI |
分类号 |
H01L31/10;G01T1/20;G01T1/24;H01L27/14;H01L27/144;H01L27/146;H01L31/0236;H01L31/103;H04N5/32;H04N5/335;H04N5/369 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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