| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor improving in on/off ratio and mobility and having two interfacial layers with a prescribed structure between a dielectric layer and a semiconductor layer. SOLUTION: The OTFT 10 includes two interface layers 80, 90 between the dielectric layer 40 and the semiconductor layer 70. One interface layer is formed from a siloxane polymer or a silsesquioxane polymer. The other interface layer is formed from a silane of formula (I) (wherein R' is an alkyl having about 1 to about 24C; R" is an alkyl having about 1 to about 24 C, halogen, alkoxy, hydroxyl or amino; L is halogen, oxygen, alkoxy, hydroxyl or amino; k is 1 or 2; and m is 1, 2 or 3). COPYRIGHT: (C)2010,JPO&INPIT |
