OPTICAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an optical semiconductor device capable of expanding a depletion layer to both sides of a p-type semiconductor layer and an n-type semiconductor layer. Ž

SOLUTION: The optical semiconductor device has: a first conductive semiconductor substrate (p-semiconductor substrate) 1; a first conductive high concentration impurity embedded layer (p+type embedded layer) 2 which is formed on the surface layer of the first conductive semiconductor substrate (p-semiconductor substrate) 1; a first conductive low concentration impurity layer (p-type semiconductor layer) 3 which is formed on the surface layer of the first conductive high concentration impurity embedded layer (p+type embedded layer) 2; a second conductive low concentration impurity layer (n-type diffusion layer) 5 which is provided in the first conductive low concentration impurity layer (p-type semiconductor layer) 3 and does not contact the first conductive high concentration impurity embedded layer (p+type embedded layer) 2; and a second conductive high concentration impurity layer (n+type diffusion layer) 6 which is provided in the second conductive low concentration impurity layer (n-type diffusion layer) 5 and does not contact the first conductive low concentration impurity layer (p-type diffusion layer) 3. Ž

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