| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of simplifying the manufacturing while suppressing mutual positional displacement of interconnection grooves and connection holes formed to an insulating film. Ž<P>SOLUTION: The method for manufacturing the semiconductor device comprises the steps of: sequentially applying resist 14, 15; forming silylation parts 15a, 15b after exposing the resist 15 through a mask 20; forming a silylation part 14a; forming a connection hole 13b by etching the insulating film 13 with the resist 15, 14 as masks after removing the silylation part 15a to pattern the resist 15, 14; and forming the interconnection groove 13a by etching the insulating film 13 with the resist 15 as a mask after removing the silylation part 14a to pattern the resist 14. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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