发明名称 |
PROXIMITY CHARGE SENSING FOR SEMICONDUCTOR DETECTORS |
摘要 |
A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.
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申请公布号 |
US2010102844(A1) |
申请公布日期 |
2010.04.29 |
申请号 |
US20090604173 |
申请日期 |
2009.10.22 |
申请人 |
REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
LUKE PAUL N.;TINDALL CRAIG S.;AMMAN MARK |
分类号 |
G01R31/26 |
主分类号 |
G01R31/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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