HIGH TEMPERATURE SHEET HANDLING SYSTEM AND METHODS
摘要
<p>Methods and apparatus provide for imparting a controlled supply of gas to at least one Bernoulli chuck to provide a balanced draw and repellant gas flow to a material sheet; and at least one of: elevating a temperature of the supply of gas to the at least one Bernoulli chuck such that the gas flow to the material sheet is provided at the elevated temperature, providing a stream of gas to an insulator substrate to promote separation of an exfoliation layer from a donor semiconductor wafer, and providing a stream of gas to a junction of the insulator substrate and any support structure to promote separation of the insulator substrate and the supporting structure.</p>
申请公布号
WO2010048254(A1)
申请公布日期
2010.04.29
申请号
WO2009US61431
申请日期
2009.10.21
申请人
CORNING INCORPORATED;LOCK, WILLIAM, E.;NISHIMOTO, MICHAEL, Y.