| 摘要 |
A method for forming a fine pattern of a semiconductor device includes forming an insulating layer and an etch layer over a semiconductor substrate, coating a photoresist layer over the etch layer, forming a photoresist pattern by performing a photolithography process for the photoresist layer, forming spacers at sidewalls of the photoresist pattern by performing a primary etching process using the photoresist pattern as a mask, and forming an etch layer pattern and an insulating layer pattern by performing a secondary etching process using the photoresist pattern and the spacers as a mask.
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