SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention provides a semiconductor light emitting device in which a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3 to 13% of the area of the semiconductor light emitting device, thus improving light-emitting efficiency.