| 摘要 |
<p>Provided is a CCD solid-state imaging element in which the area of a read channel is reduced and the ratio of the surface area of a light-receiving portion to the area of one pixel is large. Provided is a solid-state imaging element characterized by comprising a first conductivity-type planar semiconductor layer which is formed on a second conductivity-type planar semiconductor layer, a hole which is formed in the first conductivity-type planar semiconductor layer, a first conductivity-type high-concentration impurity region which is formed on the bottom portion of the hole, an element isolation region which is produced from a first conductivity-type high-concentration impurity, formed on a part of the sidewall of the hole, and connected to the first conductivity-type high-concentration impurity region, a second conductivity-type photoelectric conversion region the charge amount of which changes when receiving light and which is formed under the first conductivity-type high-concentration impurity region formed on the bottom portion of the hole and on another part of the sidewall of the bottom portion of the hole, a transfer electrode which is formed on the sidewall of the hole with a gate insulating film therebetween, a second conductivity-type CCD channel region which is formed on the surface of the first conductivity-type planar semiconductor layer and on another part of the sidewall of the upper portion of the hole, and a read channel which is formed in a region sandwiched between the second conductivity-type photoelectric conversion region and the second conductivity-type CCD channel region.</p> |
