发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>The semiconductor device has a semiconductor substrate that includes an element, a first structural layer that includes a first insulating layer and first wiring electrically connected to the element and provided on one surface of the semiconductor substrate, a second structural layer that includes a second insulating layer and second wiring electrically connected to the first wiring, that is laminated on the first structural layer, and that is thicker than the first structural layer, and a third structural layer that includes a third insulating layer and third wiring and that is provided on the opposite surface of the semiconductor substrate from the surface where the first structural layer is provided.</p> |
申请公布号 |
WO2010047227(A1) |
申请公布日期 |
2010.04.29 |
申请号 |
WO2009JP67495 |
申请日期 |
2009.10.07 |
申请人 |
NEC CORPORATION;KIKUCHI, KATSUMI;YAMAMICHI, SHINTARO |
发明人 |
KIKUCHI, KATSUMI;YAMAMICHI, SHINTARO |
分类号 |
H01L21/768;H01L21/3205;H01L21/822;H01L23/12;H01L23/52;H01L25/065;H01L25/07;H01L25/18;H01L27/04 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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