发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 <p>The semiconductor device has a semiconductor substrate that includes an element, a first structural layer that includes a first insulating layer and first wiring electrically connected to the element and provided on one surface of the semiconductor substrate, a second structural layer that includes a second insulating layer and second wiring electrically connected to the first wiring, that is laminated on the first structural layer, and that is thicker than the first structural layer, and a third structural layer that includes a third insulating layer and third wiring and that is provided on the opposite surface of the semiconductor substrate from the surface where the first structural layer is provided.</p>
申请公布号 WO2010047227(A1) 申请公布日期 2010.04.29
申请号 WO2009JP67495 申请日期 2009.10.07
申请人 NEC CORPORATION;KIKUCHI, KATSUMI;YAMAMICHI, SHINTARO 发明人 KIKUCHI, KATSUMI;YAMAMICHI, SHINTARO
分类号 H01L21/768;H01L21/3205;H01L21/822;H01L23/12;H01L23/52;H01L25/065;H01L25/07;H01L25/18;H01L27/04 主分类号 H01L21/768
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