SEMICONDUCTOR DEVICE WITH CHANNEL ALIGNMENT AND STRAINED SILICON AND METHOD OF MANUFACTURE

摘要

A semiconductor device (100) comprising a first transistor device (105) and second transistor device (107) both on a semiconductor substrate (110). The first transistor device has a first n-channel (115) and a first p-channel (117) and the second transistor device has a second n-channel (125) and a second p-channel (127). Each of the p-channels and the n-channels has a long lateral axis (135) that is aligned with an orientation plane of a silicon layer of the semiconductor substrate. The second p-channel and the first and second n-channels include the silicon layer configured as strained silicon. The first p-channel includes the silicon layer configured as relaxed silicon. Each of the n-channels contact gate structures that impart a tensile stress in the n-channels.